The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Aug. 22, 1997
Tim Z Hossain, Austin, TX (US);
Franklin D Crawford, Jr, Austin, TX (US);
Don A Tiffin, Austin, TX (US);
Advanced Micro Devices, Sunnyvale, CA (US);
Abstract
A neutron detecting semiconductor device and process for fabricating the same is provided. In one particular embodiment, a semiconductor device for detecting neutrons is formed by forming one or more memory cells on a substrate and forming a neutron-reactant material over the one or more memory cells. Upon reacting with a neutron, the neutron-reactant material emits one or more particles capable of inducing a state change in the one or more memory cells. The neutron-reactant material may be formed from a borophosphosilicate glass (BPSG) having a relatively high concentration of .sup.10 Boron. For example, the concentration .sup.10 Boron may range from 80 to 100 percent or 95 to 100 percent of the total Boron concentration in the BPSG material.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile