The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Feb. 26, 1998
Susumu Watanabe, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
It is an object of the invention to improve reliability of wiring layers in a semiconductor device comprising an intermetal insulator layer composed of a polysilazane SOG layer. A method for fabricating semiconductor device comprises the steps of forming a wiring layer provided with a oxidization-resisting metallic layer covering its outer surface on an underlying insulator layer, which is formed on a semiconductor substrate, forming a side wall insulator layer with penetration-resisting property against oxidizing gas around a wiring layer and the oxidization-resisting metallic layer, applying spin-on glass (SOG)-producing materiel composed of silicon compound materiel, which comprises silazane bonding in its back bone, thereon, and sintering the SOG-producing material in oxidization gas atmosphere.