The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Feb. 12, 1998
Applicant:
Inventor:
Atsushi Ogura, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438404 ;
Abstract
An oxygen ion is implanted into a silicon substrate at a dose of 3.times.10.sup.17 (cm.sup.-2) or lower. Then, the silicon substrate is heated at 1250.degree. C. or lower for 40 minute or longer. And the silicon substrate is heated at 1300.degree. C. or higher in an inert gas atmosphere. Further, the silicon substrate is heated at 1300.degree. C. or higher in an atmosphere containing an oxygen gas in an amount of 1% by volume or more.