The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Dec. 05, 1997
Reinhard Herzer, Ilmenau, DE;
Mario Netzel, Braunsbedra, DE;
Semikron Elektronik GmbH, , DE;
Abstract
An IGBT includes two trenches extending from an emitter terminal toward a first side of a substrate of a first conductivity material. A collector layer of a second conductivity material is disposed on a second side of the substrate. The trenches each have a gate and a insulator within them. On the outside of the trenches, bulk regions of a second conductivity type are disposed on the first side of the substrate. On top of the bulk regions are bulk connection regions of a second conductivity type and source regions of a first conductivity type. The emitter couples the bulk and source regions. A material of either conductivity type, an insulator, or two MOSFETS are placed between the trenches. With multiple IGBTs, the trenches can be arranged in striped, island-like, or lattice format.