The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Sep. 30, 1997
Virinder Grewal, Wappingers Falls, NY (US);
Bruno Spuler, Wappingers Falls, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method for forming integrated circuit conductors. The method includes the steps of placing in a reactive ion etching chamber a semiconductor body having disposed over a surface thereof: a metalization layer comprising an aluminum layer disposed between a pair of barrier metal layers; and, a photoresist layer disposed on a selected portion of a surface of an upper one of the pair of barrier layers. Radio frequency energy is inductively coupled into the chamber while silicon tetrachloride and chlorine are introduced into the chamber at rates selected to etch portions of the metalization layer exposed by the photoresist with aluminum having substantially vertical sidewalls. The silicon tetrachloride is introduced into the chamber at a rate in the range of 4 to 8 sccm. The rate of the chlorine is in the range of 50 sccm to 150 sccm. The chamber is at a pressure of about 12 milliTorr during the etching of the metalization layer. The chamber operates with an RF power of about 125 watts while the semiconductor is disposed on a platform in the chamber having an RF bias power level of about 250 watts during the etching.