The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Mar. 03, 1999
Applicant:
Inventor:
Jae-Hyun Joo, Cheongju, KR;
Assignee:
LG Semicon Co., Ltd., Cheongju, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438369 ; 438253 ; 438669 ;
Abstract
A capacitor fabrication method for a semiconductor memory device, and in particular for a lower-portion electrode forming of a memory cell capacitor, wherein the entire effective area of the capacitor is extended by using a second conductive layer pattern as a mask and patterning an underlying first conductive layer which will be the lower-portion electrode. A mixed conductive material residue is generated in forming the lower-portion electrode and forms conductive residue sidewalls at the both sides of the lower-portion electrode.