The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2000
Filed:
Nov. 25, 1997
Shigeki Sakai, Tsukuba, JP;
Shinji Migita, Tsukuba, JP;
Agency of Industrial Science & Technology, Tokyo, JP;
Abstract
A method for crystal growth of a multi-element oxide thin film containing bismuth as a constituent element has setting a growth environment to fall under conditions such that an oxide of bismuth alone will not be formed, but the desired multi-element oxide will be formed; and supplying bismuth in excess of other elements to the growth environment, to prevent the lack of bismuth and evaporate surplus bismuth from the thin film. This method suppresses the formation of different phases or the precipitation of impurities ascribed to the deviation of the proportion of bismuth element from the desired composition, enables a high quality thin film to be grown, and markedly broadens the ranges of the set conditions for the thin film growth temperature and oxidizing gas in comparison with conventional technologies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile