The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Nov. 30, 1998
Dong-won Shin, Kyungki-do, KR;
Jin-woo Lee, Kyungki-do, KR;
Abstract
A ferroelectric memory device formed on a microelectronic substrate is evaluated. The memory device includes a sense amplifier and a plurality of ferroelectric capacitors that are operatively connected to the sense amplifier to read information stored in the ferroelectric capacitors. A plurality of test ferroelectric capacitors is formed on the microelectronic substrate. Polarization characteristics are determined for the plurality of test ferroelectric capacitors. An input to the sense amplifier is estimated from the determined polarization characteristics, and the ferroelectric memory device is evaluated based on the estimated input. The estimated input may be compared to an input criterion, e.g., a minimum sensing charge or voltage for the sense amplifier, and the ferroelectric memory device may be either rejected or subjected to further testing depending on whether the estimated input fails to meet or meets the input criterion.