The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2000

Filed:

Oct. 14, 1999
Applicant:
Inventors:

John J Berenz, San Pedro, CA (US);

George W McIver, Redondo Beach, CA (US);

Alfred E Lee, Torrance, CA (US);

Assignee:

TRW Inc., Redondo Reach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P / ; H01H / ;
U.S. Cl.
CPC ...
333101 ; 200181 ; 333105 ;
Abstract

An RF switch formed as a micro electro-mechanical switch (MEMS) which can be configured in an array forming a micro electro-mechanical switch array (MEMSA). The MEMS is formed on a substrate. A pin, pivotally carried by the substrate defines a pivot point. A rigid beam or transmission line is generally centrally disposed on the pin forming a teeter-totter configuration. The use of a rigid beam and the configuration eliminates the torsional and bending forces of the beam which can reduce reliability. The switch is adapted to be monolithically integrated with other monolithic microwave integrated circuits (MMIC) for example from HBTs and HEMTs, by separating such MMICs from the switch by way of a suitable polymer layer, such as polyimide, enabling the switch to be monolithically integrated with other circuitry. In order to reduce insertion losses, the beam is formed from all metal, which improves the sensitivity of the switch and also allows the switch to be used in RF switching applications. By forming the beam from all metal, the switch will have lower insertion loss than other switches which use SiO2 or mix metal contacts.


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