The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2000

Filed:

Nov. 28, 1997
Applicant:
Inventors:

John M Pigott, Phoenix, AZ (US);

Stephan Ollitrault, Seysses, FR;

Damon Peter Broderick, Munich, DE;

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ;
U.S. Cl.
CPC ...
326 83 ; 326 33 ; 326 34 ; 326 80 ; 327389 ;
Abstract

An input circuit (20) and a method for protecting the input circuit (20) from positive and negative overvoltages. The input circuit (20) includes an N-channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) (12), a P-channel MOSFET (13), a Zener diode (21), and a diode-connected transistor (22). The P-channel MOSFET (13) protects the N-channel MOSFET (12) from negative overvoltages. The Zener diode (21) and the diode-connected transistor (22) protect the N-channel MOSFET (12) from positive overvoltages. In addition, the Zener diode (21) protects the P-channel MOSFET (13) from positive overvoltages.


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