The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Jan. 26, 1999
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
324769 ;
Abstract
A method and apparatus that uses gate-to-substrate capacitance with varying amounts of source/drain junction bias to measure channel lateral doping profile by applying a series of different voltages between the source/drain and the substrate. The gate capacitance is measured for the different voltages. The capacitance is used to calculate the depletion width. From the depletion width, channel doping is calculated. Using this method direct evidence of a localized Boron pile up at source/drain edge is shown.