The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Mar. 26, 1998
Richard B Merrill, Woodside, CA (US);
Foveonics, Inc., Santa Clara, CA (US);
Abstract
A storage pixel sensor disposed on a semiconductor substrate comprises a MOS capacitor storage element having a diffusion terminal and a gate terminal. A speed node is connected to the diffusion terminal and biased at either a first control potential or a second control potential, the first potential selected to keep the MOS capacitor in a state of inversion, the second potential selected to keep the MOS capacitor in a state of depletion. A photodiode has an anode connected to a reference potential and a cathode. A semiconductor reset switch has a first terminal connected to the cathode and a second terminal connected to a reset reference potential. A semiconductor transfer switch has a first terminal connected to the cathode and a second terminal connected to the gate terminal of the capacitive storage element. A semiconductor amplifier has an input connected to the gate terminal of the capacitive storage element and an output. The semiconductor reset switch and the semiconductor transfer switch each have a control element connected to a control circuit for selectively activating the semiconductor reset switch and the semiconductor transfer switch. A light shield is disposed over a portion of the semiconductor substrate including the second terminal of the semiconductor transfer switch to prevent substantially all photons from entering the portion of the semiconductor substrate. Structures are present for preventing substantially all minority carriers generated in the semiconductor substrate from entering the portion of the semiconductor substrate. A plurality of storage pixel sensors are disposed in an array.