The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Jul. 16, 1998
Applicant:
Inventor:
Akio Uenishi, Tokyo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257139 ; 257355 ;
Abstract
Internal gate electrodes (71) are all connected in common to a gate terminal, and a floating gate electrode (72) is connected to the gate electrode of an NMOS transistor (M1). An external emitter electrode (91) is provided on a first major surface of P-type diffused lease region (21), and N-type diffused emitter region (31) and P-type diffused base region (21) are short-circuited. The source of the NMOS transistor (M1) and an emitter terminal are also connected to the external emitter electrode (91). The drain of the NMOS transistor (M1) is connected to an external terminal.