The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2000
Filed:
Dec. 29, 1997
Applicant:
Inventors:
Jeong Hwan Son, Daejon, KR;
Jong Kwan Kim, Cheongju, KR;
Assignee:
LG Semicon Co., Ltd., Cheongju, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438424 ; 438757 ;
Abstract
A method of forming an isolation region of a semiconductor device, includes the steps of forming a first insulating film on a substrate; defining a plurality of isolation regions on the first insulating film; removing portions of the first insulating film in the isolation regions to expose portions of the substrate; selectively removing the exposed portions of the substrate to form at least one trench; forming a second insulating film in the at least one trench and on portions of the first insulating film; and removing the first insulating film so as to remove the second insulating film formed thereon.