The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Sep. 05, 1997
Jun-ichi Hashimoto, Yokohama, JP;
Michio Murata, Yokohama, JP;
Nobuyuki Ikoma, Yokohama, JP;
Jiro Fukui, Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
In the present method, at the time when a semiconductor laser is being made, nitrogen or phosphorus element is introduced into an active layer comprising a GaAs based compound from an end face thereof, thereby changing the region of the active layer in the vicinity of the end face into a GaN or GaP based compound. Accordingly, the energy band gap of this region is made wider than the energy band gap within the active layer, and thus substituted region is changed into a layer transparent to the laser light generated within the active layer. Thus, the end face can be prevented from deteriorating upon the temperature rise caused by laser light absorption at the end face.