The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Jan. 09, 1997
Applicant:
Inventors:
Junichi Matsushita, Kanagawa, JP;
Jun Yoshikawa, Kanagawa, JP;
Masayuki Sanada, Niigata, JP;
Tatsuya Shimizu, Yamagata, JP;
Assignee:
Toshiba Ceramics Co., Ltd., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438795 ; 438799 ; 438715 ; 438660 ; 438913 ;
Abstract
A heat treatment is performed in a hydrogen-gas containing atmosphere. A high-purity inert gas having a water content of not more than 2.57 ppm is used as a substitution gas for replacing a wafer-input air atmosphere and for replacing the hydrogen-gas containing atmosphere after the heat treatment.
Quick Actions:
Matsushita, Junichi. (2000). Hydrogen heat treatment method of silicon wafers using a high-purity (U.S. Patent No. 6066579). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6066579
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile