The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Sep. 30, 1997
Applicant:
Inventor:
Dirk Tobben, Fishkill, NY (US);
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438717 ; 438723 ; 438724 ; 438733 ;
Abstract
A process for the manufacture of silicon integrated circuits uses a dual damascene metallization process with an organic intermetal dielectric (14). A pattern to be etched is first etched in a hard mask (16) without exposing the underlying intermetal dielectric (14) and then transferred into the intermetal dielectric (14) on an enlarged scale.y