The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Dec. 07, 1998
Applicant:
Inventors:
Vikram Doshi, Plano, TX (US);
Hiroshi Ono, Plano, TX (US);
Takayuki Niuya, Plano, TX (US);
Hayato Deguchi, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438439 ; 438225 ; 438297 ; 438362 ;
Abstract
A technique for reducing active area encroachment (birdsbeak) by using a polysilicon hard mask combined with both wet and dry etch for the isolation nitride. This process forms a thinner layer of nitride adjacent the openings for oxide growth, which reduces stress at the silicon/nitride interface. The advantages include control over birdsbeak, reliable gate oxide quality, low junction leakage current, an improved active area, improved isolation, low peripheral junction leakage, and higher field transistor threshold voltage.