The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Feb. 02, 1998
David Ho Poh, Singapore, SG;
Tritech Microelectronics, Ltd., Singapore, SG;
Abstract
A multilevel capacitor structure compatible with CMOS processing for use in switched capacitor circuits is disclosed. The capacitor structure has an associated parasitic capacitor which is placed in such a way so as to minimize the impact on the performance of a the switched capacitor circuit. The parasitic capacitor is formed between a first plate of the shielded capacitor and a diffusion well within a substrate. The diffusion well is connected to a quiet voltage reference source to isolate the shielded capacitor from noise present on the substrate. The shielded capacitor has a first plate that is fabricated from a first conductive material such as polycrystalline silicon or polycide, a second plate fabricated from a second conductive material such as a first level of metal on an integrated circuit, and a third capacitor plate fabricated from a second level of metal of an integrated circuit. The first plate and the third plate are connected to give a total capacitance given by the sum of capacitances between the first plate and second plate and between the second plate and third plate.