The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Aug. 05, 1999
Ichiro Murai, Tateyama, JP;
Nippon Steel Semiconductor Corporation, Chiba, JP;
Abstract
A gate electrode comprises a conductive gate electrode body and gate side walls. The channel region beneath the gate electrode has an NUDC structure having a p.sup.- impurity region and p.sup.+ impurity regions. The p.sup.- impurity region is formed before the gate electrode body. After the formation of the gate electrode body, the p.sup.+ impurity regions are formed by ion implantation before the gate side walls. The ion implantation is carried out perpendicular to the substrate so that the implanted ions will not reach further around the center of the channel region. Of the gate oxide films over the channel region, the thickness of the gate oxide films at both ends of the channel region is thinner than that of the gate oxide film in the middle of the channel length so as to suppress lowering of the current drivability.