The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
May. 05, 1997
Applicant:
Inventor:
Jeong Hwan Son, Daejen-si, KR;
Assignee:
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438299 ; 438286 ; 438305 ; 438592 ; 438595 ;
Abstract
A field effect transistor includes a semiconductor substrate; a gate insulating film on the semiconductor substrate; a first impurity region and a second impurity region formed in a surface of the substrate; an lightly doped region in contact with the first impurity region and formed toward the second impurity region in the semiconductor substrate; and an L-shaped gate electrode on the semiconductor substrate extending between the lightly doped region and the second impurity region.