The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2000
Filed:
Nov. 02, 1998
Applicant:
Inventor:
Hisamitsu Suzuki, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438202 ; 438234 ;
Abstract
A method of making a BiCMOS semiconductor device in which different polysilicon layers are used to form the gate electrodes of the CMOS devices and an emitter leading electrode for the bipolar device. A first polysilicon layer forms the lower portion of the gate electrodes of the CMOS devices, while a second highly doped polysilicon layer forms a center portion of emitter leading electrode of the bipolar device.