Semiconductor integrated circuit measuring current to test damaged

Abstract

A semiconductor integrated circuit that measures a current which flows upon deactivation of the circuit in order to test for a damaged transistor therein. The circuit includes an input node for receiving an input voltage, a reference node for receiving a reference voltage, a first source potential node for receiving a first source potential level, a second source potential node for receiving a second source potential level, and a sense circuit connected between the first source potential node and the second source potential node and brought into an operating state during a period in which the first source potential level is supplied. The sense circuit compares the input voltage and the reference voltage and outputs the result of comparison to a sense output node. A buffer circuit is connected between the sense output node and a buffer output node and is adapted to output a voltage corresponding to the voltage appearing at the sense output node to the buffer output node. A first switching circuit is connected between the first source potential node and the sense circuit and is adapted to selectively connect between the sense circuit and the first source potential node in response to the voltage supplied to the reference node.