The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Oct. 01, 1998
Mitsuhiro Togo, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
Into the portion of a silicon substrate which lies in the vicinity of a trench isolation portion, ions such as argon for enhancing the oxidation rate are implanted. Or, nitrogen ions for lowering the oxidation rate are implanted into the portion of the silicon substrate other than the portion thereof lying in the vicinity of the trench isolation portion. Thereafter, thermal oxidation is performed, so that a gate insulation film is formed in such a manner that the thickness thereof becomes equal to or greater than the thickness of the center portion thereof. Thus, the deterioration of the breakdown voltage of the insulation film can be prevented, because the gate insulation film becomes thin in the end portion of the gate electrode.