The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Jul. 20, 1998
Jeong Hwan Son, Taejeon-si, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
Semiconductor device and method for fabricating the same, is disclosed, in which LDD regions and source/drain regions are provided with a silicide for reducing resistances to prevent short channel, the device including a gate insulating film and a gate electrode formed stacked on a prescribed region of a semiconductor substrate, sidewall spacers formed at both sides of the gate insulating film and the gate electrode, first impurity regions formed in surfaces of the semiconductor substrate under the sidewall spacers, second impurity regions formed in the semiconductor substrate on both sides of the sidewall spacers and the first impurity regions, first silicide films at surfaces of the first impurity regions, and second silicide films at surfaces of the gate electrode and the second impurity regions.