The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2000
Filed:
Sep. 04, 1997
Applicant:
Inventor:
Hung Pham Le, San Jose, CA (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438250 ; 438251 ; 438252 ; 438393 ; 438395 ;
Abstract
A high-precision, linear MOS-transistor-gate capacitor device is provided by applying a source/drain high-energy, high-dose ion implantation through implant windows in a polysilicon top plate of the capacitor. The ion implantation may be a step of generic MOS source/drain process flow.