The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2000

Filed:

Feb. 20, 1998
Applicant:
Inventors:

Miki Suzuki, Kawasaki, JP;

Jun Kikuchi, Kawasaki, JP;

Mitsuaki Nagasaka, Kawasaki, JP;

Shuzo Fujimura, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G01K / ; C03C / ; B44C / ;
U.S. Cl.
CPC ...
216 59 ; 134-11 ; 134-12 ; 216 60 ; 216 64 ; 216 67 ; 216 72 ; 216 79 ; 216 80 ; 438714 ; 438715 ; 438718 ; 438723 ; 438743 ; 438756 ;
Abstract

A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.


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