Method for measuring current density in a semiconductor device with kink

Abstract

A method for measuring kink effect of a first semiconductor device including the following steps is disclosed herein. Firstly, choose a second and a third semiconductor device. The first, the second and the third semiconductor device have the same channel length and different channel width. The next step, apply a voltage on the drain electrode of respective semiconductor device. The voltage is applied to the drain electrode and the DIBL effect is avoided. The following step, measure the threshold voltage of every. Next, measure the source to drain current by applying the respective threshold voltages on the respective gate electrode of every semiconductor device. Subsequently, generates a slope by dividing a first drain current difference by a first channel width difference. The first drain current difference is formed of subtracting a second drain to source current of the second semiconductor devices by and a third drain to source current of the third semiconductor device. The first channel width difference is formed of subtracting the second channel width of the second semiconductor device and the third channel width of the third semiconductor device. Then, subtract a first drain to source current of the first semiconductor device by a product to acquire a parasitic current. The product is formed of the product of the slope and the channel width of the third semiconductor. Finally, divide the parasitic current by a channel length of the first semiconductor device to obtain the linear current density as the index representing the kink effect of the first semiconductor device.