The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2000

Filed:

Mar. 24, 1998
Applicant:
Inventors:

Akihiko Okamoto, Tokyo, JP;

Hisashi Takemura, Tokyo, JP;

Yoshinori Tomihari, Tokyo, JP;

Naruaki Takada, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
313309 ; 313336 ; 313351 ; 313495 ;
Abstract

A field emission cold cathode element designed with the objects of enabling control of overcurrents that arise at times of discharge without adding a power source or complicating the operating circuits, realizing high-frequency operation and lower power consumption without giving rise to short-circuit damage due to discharge breakdown, and moreover, suppressing increases in element temperature; wherein an n-type region underlying emitters is divided between three n-type semiconductor regions: a first n-type semiconductor region, a second n-type semiconductor region and a third n-type semiconductor region. A third n-type semiconductor region below the emitters formed so as to be surrounded by a p-type semiconductor region, a second n-type semiconductor region below the third n-type semiconductor region formed so as to be surrounded by a p-type semiconductor region, and a first n-type semiconductor region formed below the second n-type semiconductor region; wherein the cross section of the second n-type semiconductor region is smaller than the cross section of the third n-type semiconductor region, thereby producing an n-type region made up of three n-type semiconductor regions that has a constricted shape.


Find Patent Forward Citations

Loading…