The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Jul. 07, 1998
Tsuyoshi Tsutsui, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
There is provided a semiconductor laminated portion in which gallium nitride based compound semiconductor layers including an n-type layer and a p-type layer are laminated for forming an emitting layer on a substrate. Then, an n-side electrode and a p-side electrode are provided so as to be electrically connected to the n-type layer and p-type layer of the semiconductor laminated portion, respectively. The n-type layer includes at least an n-type first layer and an n.sup.+ -type second layer so that the carrier concentration of the portion to be provided with the n-side electrode is higher than the carrier concentration of the portion in contact with the emitting layer. Consequently, the ohmic contact characteristics of the n-type layer and n-side electrode are improved to reduce a forward voltage, resulting in a semiconductor light emitting device with high light emitting efficiency.