The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Jul. 13, 1998
Applicant:
Inventor:
Naoyuki Shinmura, Tenri, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438424 ; 438221 ;
Abstract
A process for manufacturing a semiconductor device including: forming a mask having a pattern for forming a trench on a semiconductor substrate; forming a film having substantially the same etch rate as the semiconductor substrate on the resulting semiconductor substrate; forming a trench having an inclined sidewall by simultaneously etching the film and a trench formation region on the semiconductor substrate; and embedding an insulating material in the trench thereby to form a device isolation region.
Quick Actions:
Shinmura, Naoyuki. (2000). Process for forming a trench device isolation region on a semiconductor (U.S. Patent No. 6060371). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6060371
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile