The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2000
Filed:
Oct. 22, 1999
Chao-Ming Koh, Hsin-Chu, TW;
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Abstract
A process for forming a cylindrical shaped, storage node structure, for a DRAM capacitor, has been developed. The process features forming a capacitor opening, in an insulator layer, exposing the fop surface of a storage node plug structure, located at the periphery of the capacitor opening. The deposition of a conductive layer, followed by a blanket, anisotropic RIE procedure, results in the creation of a cylindrical shaped, storage node structure, on the sides of the capacitor opening, with contact to the underlying storage node plug structure, accomplished via a segment of the cylindrical shaped, storage node structure, overlying a portion of the top surface of the underlying storage node plug structure. The cylindrical shaped, storage node structure described on this invention, is formed without the use of the costly CMP procedure, and without the use of the costly and complex, photoresist plug, used to protect the bottom portion of a storage node structure, employed for the fabrication of counterpart, crown shaped storage node structures.