The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Dec. 12, 1997
John D Joannopoulos, Belmont, MA (US);
Pierre R Villeneuve, Boston, MA (US);
Shanhui Fan, Somerville, MA (US);
Daniel S Abrams, Cambridge, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
A nonlinear dielectric material is incorporated within a photonic crystal as a means of changing the refractive index of a defect. In this way, the resonant frequency can be easily adjusted, after fabrication, by external mechanisms (either optical or electronic). The ability to tune the frequency of a resonant mode is useful for constructing photonic integrated devices, thus the invention enables the use of a photonic-crystal microcavity for such purposes. In one embodiment there is provided a photonic crystal having a periodic dielectric structure, and a defect positioned within the structure to define a microcavity. The defect includes a nonlinear material and being adapted to have an induced variation in index of refraction so as to tune the resonant mode of the microcavity.