Multi-bank semiconductor memory device having an output control circuit

Abstract

The present invention provides a semiconductor integrated circuit that solves the aforementioned problems. A semiconductor integrated circuit of the present invention has a plurality of memory cells, for respectively storing data, bit line pairs supplied with data read from the memory cells and sense amplifiers for amplifying data supplied to the bit line pairs. The integrated circuit also has first and second data bus driving transistors, and a pair of data buses. The first data bus driver transistors each have a control terminal, for receiving data supplied to one bit line of the bit line pairs, a second terminal connected to a common node, and a third terminal, while the second data bus driver transistors each have a control terminal, for receiving data supplied to the other bit line of the bit line pairs, one terminal connected to the common node, and a third terminal. The integrated circuit of the present further has a transfer circuit, connected between the pair of data buses and the third terminals of the first and second data bus driver transistors, for electrically connecting the third terminals to the pair of data buses in response to a row select signal, and an output control circuit, connected to a first power supply potential node supplied with a first power supply potential, a second power supply potential node supplied with a second power supply potential, and the common node, for selectively connecting the common node to either the first power supply potential node or the second power supply potential node, in response to a control signal.