The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 02, 2000

Filed:

Oct. 27, 1994
Applicant:
Inventors:

Holger Heil, Munchen, DE;

Josef-Matthias Gantioler, Munchen, DE;

Rainald Sander, Munchen, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ;
U.S. Cl.
CPC ...
327 77 ; 327 63 ;
Abstract

An integrated comparator includes an inverter with a first depletion FET and a first enhancement FET, and a series circuit with a second depletion FET and a second enhancement FET. The second depletion and enhancement FETs are connected in series between a first supply voltage terminal and a first input terminal. A node between the second enhancement and depletion FETs is connected to the gate terminal of the first enhancement FET. The transfer characteristic curve of the second enhancement FET is steeper than the transfer characteristic curve of the first enhancement FET. All of the MOSFETs are of the same channel type. The voltage to be compared is connected between the second enhancement FET and ground. The switching point is determined by the transfer characteristics of the two enhancement FETs.


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