The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Sep. 25, 1996
Applicant:
Inventor:
Kouichi Kumagai, Tokyo, JP;
Assignee:
NEC Corporation, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257204 ; 257206 ; 257401 ; 257369 ;
Abstract
A semiconductor integrated circuit is disclosed which avoids operating speed degradation resulting from an increase of the gate resistance due to making the size of the device small. In a basic cell 103 comprising a group 101 of P-channel MOS transistors and a group 102 of N-channel MOS transistors, the gate width of all the MOS transistors constituting the basic cell 103 is set below 7 .mu.m, and the gate electrodes 108a, 108b, 109a, 109b are formed to surround the perimeter of source or drain diffusion areas 106a, 106c, 107a, 107c of the MOS transistors to form an electrically closed loop.