The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Jul. 21, 1998
Applicant:
Inventor:
John Rennie, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, , JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 99 ; 257 79 ; 257 94 ; 257103 ; 257-9 ; 257 12 ; 257 13 ; 257613 ; 257615 ; 257744 ; 257745 ;
Abstract
A thin oxide region is introduced to a surface of a GaN layer prior to contact meal evaporation by carefully controlling the oxidation of the surface. This results in the normally present surface states to be smothered and thus a low band offset is observed in an ohmic contact comprising the contact metal and the GaN layer. The thickness of the oxide region preferably is about 8 .ANG. to 25 .ANG.. Other elements such as S, Se, Te, As, P and Hf can be used as an alternative to O. Devices using the thin region in the ohmic contact may include semiconductor laser devices, light emitting diodes, and III-V based transistors.