The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Jun. 26, 1998
Larry Clevenger, LaGrangeville, NY (US);
Mark Hoinkis, Fishkill, NY (US);
Roy C Iggulden, Newburgh, NY (US);
Stefan J Weber, Fishkill, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Improved methods for forming metal-filled structures in openings on substrates for integrated circuit devices are obtained by the formation of a discontinuous metal liner by CVD in an opening to be filled. The discontinuous metal liner surprisingly provides wetting equivalent to or better than continuous layer CVD liners. The CVD step is followed by depositing a further amount of metal by physical vapor deposition over the discontinuous layer in the opening, and reflowing the further amount of metal to obtain the metal-filled structure. The interior surface of the opening is preferably a conductive material such as titanium nitride. Preferably, the discontinuous metal layer is made of aluminum. The metal deposited by PVD is preferably aluminum or an aluminum alloy. The methods of the invention are especially useful for the filling of contact holes, damascene trenches and dual damascene trenches. The methods of the invention are especially useful for filling structures having an opening width less than 250 nm.