The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Jul. 01, 1994
Applicant:
Inventors:
Assignee:
Motorola, Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438597 ; 438604 ; 438571 ; 438576 ; 438606 ;
Abstract
An ohmic contact to a III-V semiconductor material is fabricated by dry etching a silicon nitride layer overlying the III-V semiconductor material with a chemical comprised of a group VI element. An ohmic metal layer is formed on the III-V semiconductor material after the silicon nitride layer is etched and before any exposure of the III-V semiconductor material to a chemical which etches the III-V semiconductor material or removes the group VI element.