The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 02, 2000
Filed:
Jun. 23, 1997
Naoyuki Yoshida, Tokyo, JP;
NEC Corporation, , JP;
Abstract
In a semiconductor device manufacturing method, a first insulating film is formed on a semiconductor substrate. A contact hole is selectively formed in the first insulating film. A first conductive film is formed on the first insulating film to fill the interior of the contact hole. A second insulating film is formed on the first conductive film. A second conductive film is formed on the second insulating film. The second insulating film and the second conductive film are patterned to leave the second insulating film and the second conductive film only immediately above the contact hole. A third conductive film is formed on the surfaces of the first conductive film, the second insulating film, and the second conductive film. The third conductive film on the first and second conductive films is removed to form a cylindrical lower electrode consisting of the third conductive film left only on the side surfaces of the second insulating film and the second conductive film. An exposed portion of the first conductive film and the second conductive film are removed to expose the first and second insulating films. The second insulating film is removed to expose the first conductive film. A third insulating film and a fourth insulating film serving as an upper electrode are formed.