The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2000
Filed:
Mar. 16, 1999
Keikichi Tamaru, Uji, JP;
Hiroshi Nozawa, Uji, JP;
Yoshiro Fujii, Kameoka, JP;
Akira Kamisawa, Ukyo-ku, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
It is an object of the present invention to provide a memory device with processing function using less transistors, and capable of operating with simple operation and allows its operation with less trouble. Each of W cells 34 includes a ferroelectric capacitor CF. One end 40 of the ferroelectric capacitor CF is connected to one of data lines D through a transistor T1. The one end 40 of the ferroelectric capacitor CF is connected to an inner data line MW through a transistor T2. The structure of the Q cells 36 is almost the same as that of the W cells 34. Both readout/writing operations of data from the outside of the device are performed by using the data line D. Data read out from both the W cell 34 and the Q cell 36 is sent to the adder 28 and added thereby, and the resultant data of the addition is written to the Q cell 36 through a buffer circuit 32. The memory device with processing function can be realized with a simple structure by using ferroelectric capacitors CF.