The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2000
Filed:
Nov. 05, 1997
Hiroshi Aozasa, Kanagawa, JP;
Yutaka Hayashi, Kanagawa, JP;
Sony Corporation, , JP;
Abstract
A non-volatile memory device in which gate electrodes are formed on an upper surface and a lower surface of the channel via insulating layers, respectively, one of them is used as a read electrode and the other is used as a write electrode, whereby, at a read operation, the reading is carried out with a reduced influence upon stored charges stored at the time of writing. Particularly, it has a structure in which a source and drain region of the non-volatile semiconductor memory device is formed in the semiconductor layer formed on the insulating layer and, at the same time, one of the read electrode and write electrode is buried in the insulating layer.