The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2000
Filed:
Aug. 24, 1998
Byeong-yun Nam, Suwon, KR;
Byong-sun Ju, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A method of etching a platinum (Pt) layer of a semiconductor device includes the steps of forming a platinum layer on a semiconductor substrate, and forming a mask layer on the platinum layer. A photoresist pattern is formed on the mask layer and a mask pattern is formed by plasma-etching using the photoresist pattern as a mask. A platinum pattern is formed by plasma-etching using the photoresist pattern and the mask pattern as a mask. A platinum etching by-product is formed on the sidewalls of the photoresist pattern. The platinum layer is plasma-etched using Ar, Ar/Cl.sub.2 or Ar/HBr gas. The photoresist pattern is removed and then the platinum etching by-product and the mask pattern are removed by plasma etching. The platinum etching by-product is plasma-etched using Cl.sub.2 /O.sub.2 or HBr/O.sub.2 gas. The platinum pattern may be formed in the same etch chamber through multiple steps, and the platinum layer is etched using Ar, Ar/Cl.sub.2 or Ar/HBr, to thereby increase the etch rate and obtain a platinum pattern having a high etch slope.