The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2000
Filed:
Jun. 04, 1997
Applicant:
Inventor:
Hirohito Watanabe, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438396 ; 438239 ; 438253 ; 438254 ; 438381 ; 438397 ;
Abstract
The method of manufacturing a semiconductor memory device with a stacked capacitor is disclosed. The method is featured by forming an insulating film on semiconductor substrate, forming a high melting point metal film interposed between capacitor electrode films, selectively etching the capacitor electrode films to expose at least a part of the high melting point metal film, and removing the high melting point metal film by etching using a solution containing at least one selected from sulfuric acid, nitric acid, hydrochloric acid, phosphoric acid, hydrogen peroxide, and ammonia. Thus only the high melting point metal film can be removed without etching the insulating film.