The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 2000
Filed:
Jan. 20, 1999
Applicant:
Inventor:
Stanton Ashburn, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438221 ; 438424 ; 438359 ; 257622 ; 257510 ; 257506 ;
Abstract
A semiconductor device and method having shallow trench isolation. A pad oxide 24 and silicon 42 are formed on a substrate 20 to form a mask, and the pad oxide 24/silicon 42 mask is then patterned. Portions of the pad oxide 24/silicon 42 mask and the substrate 20 are removed to form trenches 22 in the substrate 20. A nitride fill 40 is deposited over the pad oxide 24/silicon 42 mask and the trenches 22. Advantages of the invention include a more robust STI device without central voids 34 and without edge voids 36 in the trench fill material.