The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2000

Filed:

Mar. 31, 1998
Applicant:
Inventors:

Yoshihiro Nanbu, Tokyo, JP;

Kenichi Nishi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 50 ; 372 11 ; 372 18 ; 372 20 ; 372 43 ; 372 46 ;
Abstract

The object of the present invention is to provide a variable wavelength semiconductor laser which is large in ontinuous variable wavelength width, simple and convenient in structure, easy to produce, monolithic and small in size, and easy to handle. The variable wavelength semiconductor laser includes an optical gain region formed from two-dimensional or three-dimensional carrier confinement structures having sizes approximately of a thermal de Broglie wavelength whose size dispersion is controlled so that a gain spectrum covers a required variable wavelength region for generating and amplifying light when current is injected, a light absorption control region having a light absorption coefficient which varies depending upon a current injection amount, an optical resonator including the optical gain region and the light absorption control region, and control means for controlling current amounts or voltage values to be injected to the optical gain region and the light absorption control region.


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