The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 18, 2000

Filed:

Apr. 01, 1998
Applicant:
Inventors:

Makoto Kumatoriya, Omihachiman, JP;

Toshihito Umegaki, Nagaokakyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P / ; H01F / ;
U.S. Cl.
CPC ...
333202 ; 333 241 ; 3332192 ; 428693 ; 252 6257 ;
Abstract

The magnetostatic wave device comprises a single crystal substrate made of Gd.sub.3 Ga.sub.5 O.sub.12, a magnetic garnet single crystal film provided on the single crystal substrate and at least one transducer provided on the magnetic garnet single crystal film. The magnetic garnet single crystal film has {111} plane and is made of a material expressed by the formula (YR.sub.1).sub.3 (FeR.sub.2).sub.5 O.sub.12, where R.sub.1 is at least one element selected from La, Bi, Lu and Gd, R.sub.2 is at least one element selected from Ga, Al, In and Sc and Y and Fe are the main components with respect to R.sub.1 and R.sub.2. In the magnetostatic wave device, a DC magnetic field is applied to the magnetic garnet single crystal film so that a magnetostatic surface wave propagates on the magnetic garnet single crystal film in a direction of <110> axis on {111} plane of the magnetic garnet single crystal film.


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