The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Oct. 05, 1998
Javier Andres DeLaCruz, Nashua, NH (US);
Xiangdong Zhang, Nashua, NH (US);
Matthew F O'Keefe, Chelmsford, MA (US);
Gregory Newell Henderson, Sudburg, MA (US);
Yong-Hoon Yun, Acton, MA (US);
The Whitaker Corporation, Wilmington, DE (US);
Abstract
A heterojunction bipolar transistor has a mesa including collector 604, base 603, and emitter 602 layers. The mesa has first and second sidewalls 606. An improved heat dissipation structure comprises a layer of electrically insulative and thermally conductive material 607 disposed on one of the sidewalls. A thermal path metal 600 is electrically connected to the emitter 602 and is disposed on the layer of electrically insulative and thermally conductive material 607. The thermal path metal 600 extends from the emitter 602 to the substrate 608 providing for efficient dissipation of heat that is generated by the HBT device.