The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Oct. 03, 1997
Applicant:
Inventors:
Satoshi Shimada, Hitachi, JP;
Akihiko Saito, Hitachi, JP;
Masahiro Matsumoto, Hitachi, JP;
Seikou Suzuki, Hitachiota, JP;
Terumi Nakazawa, Naka-machi, JP;
Atsushi Miyazaki, Mito, JP;
Norio Ichikawa, Mito, JP;
Keiji Hanzawa, Mito, JP;
Assignees:
Hitachi, Ltd., , JP;
Primary Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
257252 ; 257248 ; 257249 ; 257254 ; 257417 ; 361280 ; 3612831 ; 3612832 ; 3612834 ;
Abstract
A semiconductor pressure sensor utilizing electrostatic capacitance has a plurality of pressure sensing electrostatic capacitances and a reference electrostatic capacitance formed on one side of a silicon chip. As a movable electrode, the pressure sensing electrostatic capacitances each have a diaphragm, which may have a displacement portion composed of a central area thereof, and a peripheral portion which is more deformable than the central portion.