The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Mar. 06, 1997
Kouhei Morizuka, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method for manufacturing a semiconductor device, comprises the steps of: depositing a first insulating film on a semiconductor substrate, and then, applying a photo resist to the first insulating film to align and develop the photo resist to form a first photo resist pattern; side-etching the first insulating film, by a predetermined size from an end portion of the first photo resist pattern, using the first photo resist pattern as a mask; depositing a second insulating film on the entire surface of the semiconductor substrate to form a gap above the semiconductor substrate between the first and second insulating films; removing the first photo resist pattern; and forming a gate electrode.